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MDD7N20C PDF预览

MDD7N20C

更新时间: 2024-11-06 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 798K
描述
N-Channel MOSFET 200V, 5.0A, 0.69(ohm)

MDD7N20C 数据手册

 浏览型号MDD7N20C的Datasheet PDF文件第2页浏览型号MDD7N20C的Datasheet PDF文件第3页浏览型号MDD7N20C的Datasheet PDF文件第4页浏览型号MDD7N20C的Datasheet PDF文件第5页浏览型号MDD7N20C的Datasheet PDF文件第6页 
                                                                                                                               
MDD7N20C  
NꢁChannelꢀMOSFETꢀ200V,ꢀ5.0A,ꢀ0.69ꢂ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
TheꢀMDD7N20CꢀusesꢀadvancedꢀMagnachipsꢀ  
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁstateꢀ  
resistance,ꢀhighꢀswitchingꢀperformanceꢀandꢀ  
excellentꢀquality.ꢀ  
ꢀVDSꢀ=ꢀ200Vꢀ  
ꢀIDꢀ=ꢀ ꢀ ꢀ 5.0Aꢀ  
ꢀRDS(ON)≤ꢀ0.69ꢀ ꢀ  
@VGSꢀ=ꢀ10Vꢀ  
MDD7N20CꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀandꢀ  
generalꢀpurposeꢀapplications.ꢀ  
Applicationsꢀ  
ꢀPowerꢀSupplyꢀ  
ꢀPFCꢀ  
ꢀLEDꢀTVꢀ  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
Symbolꢀ  
VDSS  
VGSS  
Ratingꢀ  
200ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
±30ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=100oCꢀ  
5.0ꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ  
IDꢀ  
IDM  
PDꢀ  
dv/dtꢀ  
3.1ꢀ  
Aꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
20ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
Derateꢀaboveꢀ25ꢀoCꢀ  
38.4ꢀ  
0.31ꢀ  
4.5ꢀ  
Wꢀ  
W/ꢀoCꢀ  
V/nsꢀ  
mJꢀ  
Aꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ RepetitiveꢀPulseꢀAvalancheꢀEnergy(1)  
ꢀ ꢀ Avalancheꢀcurrent(1)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
EAR  
3.84ꢀ  
5.0ꢀ  
IAR  
EAS  
62.5ꢀ  
ꢁ55~150ꢀ  
mJꢀ  
oCꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
TJ,ꢀTstgꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
110ꢀ  
Unitꢀ  
oC/Wꢀ  
3.25ꢀ  
1
Juneꢀ2012ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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