Datasheet > MDD5N50GRH

MDD5N50GRH

更新时间： 2024-11-19 17:15:19

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1212K
描述
High Rg

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MDD5N50GRH 数据手册

MDD5N50G

N-Channel MOSFET 500V, 4.4 A, 1.4Ω

General Description

Features

The MDD5N50G uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 V_DS= 550V

 I_D= 4.4A

@ T_jmax

@V_GS= 10V

 R_DS(ON)≤ 1.4Ω @V_GS= 10V

MDD5N50G is suitable device for SMPS, HID and

general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

Rating

500

Unit

Drain-Source Voltage

V_DSS

V_DSS@ T_jmax

V_GSS

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

550

±30

T_C=25^oC

T_C=100^oC

4.4

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

2.8

I_DM

P_D

17.6

T_C=25^oC

Derate above 25 ^oC

W/ ^oC

0.56

4.5

Peak Diode Recovery dv/dt⁽³⁾

Dv/dt

E_AS

V/ns

Single Pulse Avalanche Energy⁽⁴⁾

230

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

R_θJA

R_θJC

110

1.8

^oC/W

Thermal Resistance, Junction-to-Case⁽¹⁾

Aug.2021. Version 1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6

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