Datasheet > MDD5N50

MDD5N50

更新时间： 2024-09-16 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	971K
描述
N-Channel MOSFET 500V, 4.4 A, 1.4(ohm)

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MDD5N50 数据手册

MDD5N50

N-Channel MOSFET 500V, 4.4 A, 1.4Ω

General Description

Features

The MDD5N50 uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 I_D= 4.4A

 R_DS(ON)≤ 1.4Ω @V_GS= 10V

@V_GS= 10V

MDD5N50 is suitable device for SMPS, Ballast and

general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

500

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

T_C=100^oC

4.4

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

2.8

I_DM

P_D

17.6

T_C=25^oC

Derate above 25 ^oC

0.56

4.5

W/ ^oC

V/ns

^oC

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

Dv/dt

E_AS

230

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

1.8

Jun. 20011 Version 2.4

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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