5秒后页面跳转
MDD56-14N1B PDF预览

MDD56-14N1B

更新时间: 2024-11-21 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
6页 515K
描述
双二极管模块产品组合提供多种封装,击穿电压高达2200V。

MDD56-14N1B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-240AA, 3 PINReach Compliance Code:compliant
风险等级:5.76应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.48 VJEDEC-95代码:TO-240AA
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:1400 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:71 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1400 V子类别:Rectifier Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD56-14N1B 数据手册

 浏览型号MDD56-14N1B的Datasheet PDF文件第2页浏览型号MDD56-14N1B的Datasheet PDF文件第3页浏览型号MDD56-14N1B的Datasheet PDF文件第4页浏览型号MDD56-14N1B的Datasheet PDF文件第5页浏览型号MDD56-14N1B的Datasheet PDF文件第6页 
MDD56-14N1B  
=
VRRM  
IFAV  
VF  
2x1400V  
71A  
Standard Rectifier Module  
=
=
1.14V  
Phase leg  
Part number  
MDD56-14N1B  
Backside: isolated  
2
1
3
TO-240AA  
Features / Advantages:  
Applications:  
Package:  
Package with DCB ceramic  
Improved temperature and power cycling  
Planar passivated chips  
Diode for main rectification  
For single and three phase  
bridge configurations  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
4800  
Very low forward voltage drop  
Very low leakage current  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
Height: 30 mm  
Base plate: DCB ceramic  
Reduced weight  
Advanced power cycling  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20200701d  
© 2020 IXYS all rights reserved  

与MDD56-14N1B相关器件

型号 品牌 获取价格 描述 数据表
MDD56-16N1 LITTELFUSE

获取价格

Rectifier Diode, 71A, 1600V V(RRM),
MDD56-16N1B IXYS

获取价格

Diode Modules
MDD56-16N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD56-18N1B IXYS

获取价格

Diode Modules
MDD56-18N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD5N40 MGCHIP

获取价格

N-Channel MOSFET 400V, 3.4 A, 1.6ohm
MDD5N40RH MGCHIP

获取价格

N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)
MDD5N50 MGCHIP

获取价格

N-Channel MOSFET 500V, 4.4 A, 1.4(ohm)
MDD5N50FRH MGCHIP

获取价格

DPAK
MDD5N50GRH MGCHIP

获取价格

High Rg