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MDD3N40RH PDF预览

MDD3N40RH

更新时间: 2024-11-06 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
7页 1055K
描述
N-Channel MOSFET 400V, 2.0A, 3.4(ohm)

MDD3N40RH 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.73
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD3N40RH 数据手册

 浏览型号MDD3N40RH的Datasheet PDF文件第2页浏览型号MDD3N40RH的Datasheet PDF文件第3页浏览型号MDD3N40RH的Datasheet PDF文件第4页浏览型号MDD3N40RH的Datasheet PDF文件第5页浏览型号MDD3N40RH的Datasheet PDF文件第6页浏览型号MDD3N40RH的Datasheet PDF文件第7页 
MDD3N40  
N-Channel MOSFET 400V, 2.0A, 3.4Ω  
General Description  
Features  
The MDD3N40 use advanced Magnachips  
MOSFET Technology, which provides low on-state  
resistance, high switching performance and  
excellent quality.  
VDS = 400V  
ID = 2.0A  
RDS(ON) 3.4Ω  
@VGS = 10V  
@VGS = 10V  
MDD3N40 are suitable device for SMPS and  
general purpose applications.  
Applications  
Power Supply  
PFC  
LED TV  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
Rating  
400  
±30  
2.0  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
V
TC=25oC  
TC=100oC  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
Power Dissipation  
ID  
1.2  
A
IDM  
PD  
8.0  
A
TC=25oC  
Derate above 25 oC  
30  
W
0.24  
4.5  
W/ oC  
V/ns  
mJ  
A
Peak Diode Recovery dv/dt(3)  
Repetitive Pulse Avalanche Energy(4)  
Avalanche current(1)  
dv/dt  
EAR  
3.0  
IAR  
2.0  
Single Pulse Avalanche Energy(4)  
EAS  
45  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Symbol  
RθJA  
Rating  
110  
Unit  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
oC/W  
RθJc  
4.1  
1
Feb. 2014 Version 1.2  
MagnaChip Semiconductor Ltd.  

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