Datasheet > MDD4N20YRH

MDD4N20YRH

更新时间： 2024-11-19 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	810K
描述
N-Channel MOSFET 200V, 3.0A, 1.35(ohm)

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MDD4N20YRH 数据手册

MDD4N20Y

N-Channel MOSFET 200V, 3.0A, 1.35Ω

General Description

Features

The MDD4N20Y uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

V_DS= 200V

I_D= 3.0A

R_DS(ON)≤ 1.35Ω

@V_GS= 10V

MDD4N20Y is suitable device for SMPS, high

Speed switching and general purpose applications.

Applications

Power Supply

PFC

LED TV

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

200

±20

3.0

Unit

Gate-Source Voltage

V_GSS

T_C=25^oC

T_C=100^oC

Continuous Drain Current

I_D

1.9

Pulsed Drain Current⁽¹⁾

I_DM

P_D

T_C=25^oC

Derate above 25 ^oC

Power Dissipation

0.22

5.5

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Dv/dt

E_AR

Repetitive Pulse Avalanche Energy⁽⁴⁾

Avalanche current⁽¹⁾

2.7

I_AR

2.7

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

110

Unit

^oC/W

R_θJC

4.5

Dec 2011. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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