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MDD4N20YRH PDF预览

MDD4N20YRH

更新时间: 2024-09-16 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 810K
描述
N-Channel MOSFET 200V, 3.0A, 1.35(ohm)

MDD4N20YRH 数据手册

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MDD4N20Y  
N-Channel MOSFET 200V, 3.0A, 1.35  
General Description  
Features  
The MDD4N20Y uses advanced Magnachips  
MOSFET Technology, which provides low on-state  
resistance, high switching performance and  
excellent quality.  
„ VDS = 200V  
„ ID = 3.0A  
„ RDS(ON) 1.35  
@VGS = 10V  
@VGS = 10V  
MDD4N20Y is suitable device for SMPS, high  
Speed switching and general purpose applications.  
Applications  
„ Power Supply  
„ PFC  
„ LED TV  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
200  
±20  
3.0  
Unit  
V
Gate-Source Voltage  
VGSS  
V
TC=25oC  
TC=100oC  
A
Continuous Drain Current  
ID  
1.9  
A
Pulsed Drain Current(1)  
IDM  
PD  
12  
A
TC=25oC  
Derate above 25 oC  
27  
W
Power Dissipation  
0.22  
5.5  
W/ oC  
V/ns  
mJ  
A
Peak Diode Recovery dv/dt(3)  
Dv/dt  
EAR  
Repetitive Pulse Avalanche Energy(4)  
Avalanche current(1)  
2.7  
IAR  
2.7  
Single Pulse Avalanche Energy(4)  
EAS  
52  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
Symbol  
RθJA  
Rating  
110  
Unit  
oC/W  
RθJC  
4.5  
1
Dec 2011. Version 1.1  
MagnaChip Semiconductor Ltd.  

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