Datasheet > MDD4N25RH

MDD4N25RH

更新时间： 2024-11-21 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	858K
描述
N-Channel MOSFET 250V, 3.0A, 1.75(ohm)

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MDD4N25RH 数据手册

MDD4N25

N-Channel MOSFET 250V, 3.0A, 1.75Ω

General Description

Features

The MDD4N25 uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 250V

 I_D=

3.0A

 R_DS(ON)≤ 1.75Ω

@V_GS= 10V

MDD4N25 is suitable device for SMPS, HID and

general purpose applications.

Applications

 Power Supply

 PFC

 LED TV

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

250

±30

3.0

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

1.9

I_DM

P_D

T_C=25^oC

Derivate above 25 ^oC

0.29

5.5

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Repetitive Pulse Avalanche Energy⁽⁴⁾

Avalanche current⁽¹⁾

dv/dt

E_AR

3.7

I_AR

3.0

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

110

Unit

^oC/W

R_θJC

3.4

Nov 2011. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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