Datasheet > MDD3N50G

MDD3N50G

更新时间： 2024-09-17 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1033K
描述
N-Channel MOSFET 500V, 2.8 A, 2.5(ohm)

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MDD3N50G 数据手册

MDD3N50G

N-Channel MOSFET 500V, 2.8 A, 2.5Ω

General Description

Features

The MDD3N50G uses advanced Magnachip’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

 V_DS= 500V

 I_D= 2.8A

 R_DS(ON)≤ 2.5Ω

@V_GS= 10V

MDD3N50G is suitable device for SMPS, HID and

general purpose applications.

Applications

 Power Supply

 PFC

 Ballast

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

500

±30

2.8

Gate-Source Voltage

V_GSS

T_C=25^oC

T_C=100^oC

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

1.7

I_DM

P_D

11.2

T_C=25^oC

Derate above 25 ^oC

W/ ^oC

0.36

4.5

Peak Diode Recovery dV/dt⁽³⁾

MOSFET dV/dt

Repetitive Pulse Avalanche Energy⁽⁴⁾

Single Pulse Avalanche Energy⁽⁴⁾

Junction and Storage Temperature Range

dV/dt

E_AR

V/ns

4.5

E_AS

170

-55~150

^oC

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Symbol

R_θJA

Rating

110

Unit

^oC/W

Thermal Resistance, Junction-to-Case⁽¹⁾

R_θJC

2.75

Mar 2014. Version 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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