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MDD3754 PDF预览

MDD3754

更新时间: 2024-11-22 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 688K
描述
P-Channel Trench MOSFET, -40V, -24.4A, 43m(ohm)

MDD3754 数据手册

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Octoberꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                              
MDD3754ꢀ  
PꢁChannelꢀTrenchꢀMOSFET,ꢀꢁ40V,ꢀꢁ24.4A,ꢀ43mꢂꢀ  
Featuresꢀ  
GeneralꢀDescriptionꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀꢁ40Vꢀ  
IDꢀ=ꢀꢁ24.4Aꢀ  
RDS(ON)ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Theꢀ MDD3754ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ Trenchꢀ  
MOSFETTechnologytoprovidedhighperformanceinonꢁ  
stateꢀresistance,ꢀswitchingꢀperformanceꢀandꢀreliability.ꢀ  
@VGSꢀ=ꢀꢁ10Vꢀ  
<ꢀ43mꢀ @ꢀVGSꢀ=ꢀꢁ10Vꢀ  
<ꢀ58mꢀ @ꢀVGSꢀ=ꢀꢁ4.5Vꢀ  
Lowꢀ RDS(ON),ꢀ Lowꢀ Gateꢀ Chargeꢀ canꢀ beꢀ offeringꢀ superiorꢀ  
benefitꢀinꢀtheꢀapplication.ꢀ  
Applicationsꢀ  
ꢀ  
ꢀ  
Invertersꢀ  
Generalꢀpurposeꢀapplicationsꢀ  
G
AbsoluteꢀMaximumꢀRatingsꢀ(TCꢀ=25o)ꢀ ꢀ  
Characteristicsꢀ  
DrainꢁSourceꢀVoltageꢀ  
Symbolꢀ  
VDSS  
VGSS  
Ratingꢀ  
ꢁ40ꢀ  
Unitꢀ  
Vꢀ  
GateꢁSourceꢀVoltageꢀ  
±20ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=100oCꢀ  
ꢁ24.4ꢀ  
ꢁ15.4ꢀ  
ꢁ50ꢀ  
Aꢀ  
ContinuousꢀDrainꢀCurrentꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ  
PulsedꢀDrainꢀCurrentꢀ  
IDꢀ  
IDM  
PDꢀ  
Aꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
41.7ꢀ  
PowerꢀDissipationꢀ  
Wꢀ  
ꢀ TC=100oCꢀ  
16.7ꢀ  
SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
EAS  
40.5ꢀ  
mJꢀ  
oCꢀ  
TJ,ꢀTstg  
ꢁ55~+150ꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
40ꢀ  
Unitꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ  
oC/Wꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ  
3.0ꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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