5秒后页面跳转
MDD312-16N1 PDF预览

MDD312-16N1

更新时间: 2024-11-20 22:46:19
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
3页 80K
描述
High Power Diode Modules

MDD312-16N1 数据手册

 浏览型号MDD312-16N1的Datasheet PDF文件第2页浏览型号MDD312-16N1的Datasheet PDF文件第3页 
MDD 312  
IFRMS = 2x520 A  
IFAVM = 2x310 A  
VRRM = 1200-2200 V  
High Power  
Diode Modules  
3
1
2
3
VRSM  
VDSM  
V
VRRM  
VDRM  
V
Type  
2
1300  
1500  
1700  
1900  
2100  
2300  
1200  
1400  
1600  
1800  
2000  
2200  
MDD 312-12N1  
MDD 312-14N1  
MDD 312-16N1  
MDD 312-18N1  
MDD 312-20N1  
MDD 312-22N1  
1
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 100°C; 180° sine  
520  
310  
A
A
Features  
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
10500  
11200  
A
A
• International standard package  
• Direct copper bonded Al2O3-ceramic  
with copper base plate  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
9200  
9800  
A
A
• Planar passivated chips  
• Isolation voltage 3600 V~  
• UL registered E 72873  
i2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
551000  
527000  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz)  
t = 8.3 ms (60 Hz)  
423 000  
403 000  
A2s  
A2s  
Applications  
• Supplies for DC power equipment  
• DC supply for PWM inverter  
• Field supply for DC motors  
• Battery DC power supplies  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
• Simple mounting  
• Improvedtemperatureandpowercycling  
• Reduced protection circuits  
Md  
Mounting torque (M6)  
Terminal connection torque (M8)  
Typical including screws  
4.5-7/40-62 Nm/lb.in.  
11-13/97-115 Nm/lb.in.  
Weight  
750  
g
Symbol  
IRRM  
Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM; VR = VRRM  
IF = 600 A; TVJ = 25°C  
30  
mA  
V
M8x20  
VF  
1.32  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.8  
0.6  
V
mΩ  
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.12  
0.06  
0.16  
0.08  
K/W  
K/W  
K/W  
K/W  
RthJK  
QS  
IRM  
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs  
700  
260  
µC  
A
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Maximum allowable acceleration  
12.7  
9.6  
50  
mm  
mm  
m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 3  

与MDD312-16N1相关器件

型号 品牌 获取价格 描述 数据表
MDD312-18IN1 LITTELFUSE

获取价格

Rectifier Diode, 320A, 1800V V(RRM),
MDD312-18IO1 LITTELFUSE

获取价格

Rectifier Diode, 320A, 1800V V(RRM),
MDD312-18N1 IXYS

获取价格

High Power Diode Modules
MDD312-18N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD312-20N1 IXYS

获取价格

High Power Diode Modules
MDD312-20N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD312-22N1 IXYS

获取价格

High Power Diode Modules
MDD312-22N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD3400A MDD

获取价格

SOT-23-3
MDD3401 MDD

获取价格

SOT-23