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MCR706ALEADFREE PDF预览

MCR706ALEADFREE

更新时间: 2024-02-18 00:43:14
品牌 Logo 应用领域
CENTRAL 触发装置可控硅整流器
页数 文件大小 规格书
2页 470K
描述
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC, DPAK-3

MCR706ALEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.1外壳连接:ANODE
配置:SINGLE最大直流栅极触发电流:0.075 mA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:YES
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
触发设备类型:SCRBase Number Matches:1

MCR706ALEADFREE 数据手册

 浏览型号MCR706ALEADFREE的Datasheet PDF文件第2页 
MCR703A MCR704A  
MCR706A MCR708A  
www.centralsemi.com  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIER  
4 AMP, 100 THRU 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MCR703A,  
MCR704A, MCR706A, and MCR708A are epoxy  
molded Silicon Controlled Rectifiers designed for  
sensing circuit applications and control systems.  
MARKING: FULL PART NUMBER  
DPAK THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
MCR703A MCR704A  
100 200  
MCR706A MCR708A UNITS  
Peak Repetitive Off-State Voltage  
V
V
400  
600  
V
A
DRM, RRM  
RMS On-State Current (T =85°C)  
C
I
4.0  
T(RMS)  
Peak non-Repetitive Surge Current  
(1/2 cycle Sine wave, 50Hz/60Hz)  
I
15  
1.1  
0.5  
0.1  
0.2  
50  
A
A2s  
W
TSM  
I2t  
I2t Value for Fusing, t=10ms  
Peak Gate Power, tp=1.0μs  
Average Gate Power Dissipation  
Peak Gate Current, tp=1.0μs  
Critical Rate of Rise of On-State Current  
Storage Temperature  
P
GM  
P
W
G(AV)  
I
A
GM  
di/dt  
A/μs  
°C  
°C  
T
-40 to +150  
-40 to +125  
stg  
Junction Temperature  
T
J
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
I
I
I
I
I
Rated V V R =1.0KΩ  
DRM, RRM, GK  
μA  
μA  
μA  
mA  
V
DRM, RRM  
I
Rated V  
V
R
=1.0KΩ, T =125°C  
200  
75  
DRM, RRM  
DRM, RRM, GK  
C
V =12V, R =10Ω  
38  
GT  
H
D
L
I =50mA, R =1.0KΩ  
0.25  
0.55  
1.6  
2.0  
0.8  
1.8  
T
GK  
V
V
V =12V, R =10Ω  
GT  
D
L
I
=8.0A, tp=380μs  
2
V
TM  
TM  
dv/dt  
V = / V  
R
=1.0KΩ, T =125°C  
10  
V/μs  
3
D
DRM, GK  
C
R1 (1-March 2010)  

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