MCR706ARL

更新时间： 2024-02-19 05:59:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		触发装置可控硅整流器
页数	文件大小	规格书
4页	111K
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数据手册

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MCR706ARL 数据手册

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by MCR703A/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

. . . PNPN devices designed for high volume, low cost consumer applications such as

temperature, light and speed control; process and remote control; and warning

systems where reliability of operation is critical.

*Motorola preferred devices

•

Small Size

SCRs

4.0 AMPERES RMS

100 thru 600 VOLTS

Passivated Die Surface for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Recommend Electrical Replacement for C106

Available in Two Package Styles:

Surface Mount Leadforms — Case 369A

Miniature Plastic Package — Straight Leads — Case 369

ORDERING INFORMATION

•

To Obtain “DPAK” in Surface Mount Leadform (Case 369A):

Shipped in Sleeves — No Suffix, i.e., MCR706A

Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e.,

MCR706ARL

•

To Obtain “DPAK” in Straight Lead Version:

Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Value

Unit

Peak Repetitive Forward and Reverse Blocking Voltage

(1)

DRM

Volts

RRM

(1/2 Sine Wave)

CASE 369A

STYLE 5

= 1000 Ohms,

MCR703A1, MCR703A

MCR704A1, MCR704A

MCR706A1, MCR706A

MCR708A1, MCR708A

100

200

400

600

= –40 to +110°C)

Peak Non-repetitive Reverse Blocking Voltage

(1/2 Sine Wave, R = 1000 Ohms,

RSM

Volts

= –40 to +110°C)

MCR703A1, MCR703A

150

250

450

650

MCR704A1, MCR704A

MCR706A1, MCR706A

MCR708A1, MCR708A

CASE 369

STYLE 5

Average On-State Current

(T = –40 to +90°C)

(T = +100°C)

2.6

1.6

Amps

T(AV)

0.190

4.826

Surge On-State Current (1/2 Sine Wave, 60 Hz, T

TSM

+90°C)

(1/2 Sine Wave, 1.5 ms T

+90°C)

Circuit Fusing (t = 8.3 ms)

Peak Gate Power (Pulse Width = 10 µs, T = 90°C)

I t

2.6

A s

0.5

Watt

Amp

Volts

°C

Average Gate Power (t = 8.3 ms, T = 90°C)

0.1

0.2

G(AV)

Peak Forward Gate Current

Peak Reverse Gate Voltage

RGM

Operating Junction Temperature Range

Storage Temperature Range

–40 to +110

–40 to +150

°C

stg

1. V

and V for all types can be applied on a continuous basis. Ratings apply for zero or

RRM

DRM

0.243

6.172

inches

negative gate voltage; however, positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

Figure 1. Minimum Pad

Sizes for

Preferred devices are Motorola recommended choices for future use and best overall value.

Surface Mounting

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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与MCR706ARL相关器件

型号	品牌	获取价格	描述	数据表
MCR706AT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR706AT4	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 2600mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
MCR706AT4-1	ONSEMI	获取价格	4A, 400V, SCR, CASE 369D-01, DPAK-3
MCR706AT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR706ATIN/LEAD	CENTRAL	获取价格	Silicon Controlled Rectifier,
MCR706ATIN/LEAD#N/A	CENTRAL	获取价格	Silicon Controlled Rectifier,
MCR706ATR13	CENTRAL	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
MCR707A	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR708A	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR708A	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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