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MC-458CB641ES-A80 PDF预览

MC-458CB641ES-A80

更新时间: 2024-09-09 07:03:15
品牌 Logo 应用领域
尔必达 - ELPIDA /
页数 文件大小 规格书
16页 146K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

MC-458CB641ES-A80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MODULE包装说明:DIMM, DIMM144,32
针数:144Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.92访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):125 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N144内存密度:536870912 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
湿度敏感等级:1功能数量:1
端口数量:1端子数量:144
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM144,32
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:25.4 mm自我刷新:YES
最大待机电流:0.004 A子类别:DRAMs
最大压摆率:0.92 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MC-458CB641ES-A80 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-458CB641ES,458CB641PS,458CB641XS  
8M-WORD BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-458CB641ES, MC-458CB641PS and MC-458CB641XS are 8,388,608 words by 64 bits synchronous  
dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
8,388,608 words by 64 bits organization  
Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
Clock frequency (MAX.)  
125 MHz  
Access time from CLK (MAX.)  
MC-458CB641ES-A80  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
100 MHz  
MC-458CB641ES-A10  
MC-458CB641PS-A80  
MC-458CB641PS-A10  
MC-458CB641XS-A80  
MC-458CB641XS-A10  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0, BA1 (Bank Select)  
Programmable burst-length: 1, 2, 4, 8 and Full Page  
Programmable wrap sequence (Sequential / Interleave)  
Programmable /CAS latency (2, 3)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
Single 3.3V ±0.3V power supply  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0069N10 (1st edition)  
(Previous No. M14015EJ5V0DS00)  
Date Published January 2001 CP (K)  
This product became EOL in March, 2004.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
Printed in Japan  

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