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MC-458CB641PS PDF预览

MC-458CB641PS

更新时间: 2024-11-26 11:54:31
品牌 Logo 应用领域
尔必达 - ELPIDA /
页数 文件大小 规格书
16页 146K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

MC-458CB641PS 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-458CB641ES,458CB641PS,458CB641XS  
8M-WORD BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-458CB641ES, MC-458CB641PS and MC-458CB641XS are 8,388,608 words by 64 bits synchronous  
dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
8,388,608 words by 64 bits organization  
Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
Clock frequency (MAX.)  
125 MHz  
Access time from CLK (MAX.)  
MC-458CB641ES-A80  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
100 MHz  
MC-458CB641ES-A10  
MC-458CB641PS-A80  
MC-458CB641PS-A10  
MC-458CB641XS-A80  
MC-458CB641XS-A10  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0, BA1 (Bank Select)  
Programmable burst-length: 1, 2, 4, 8 and Full Page  
Programmable wrap sequence (Sequential / Interleave)  
Programmable /CAS latency (2, 3)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
Single 3.3V ±0.3V power supply  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0069N10 (1st edition)  
(Previous No. M14015EJ5V0DS00)  
Date Published January 2001 CP (K)  
This product became EOL in March, 2004.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
Printed in Japan  

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