Datasheet > MC-458CB646

MC-458CB646

更新时间： 2024-11-03 22:24:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	199K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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中文翻译

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MC-458CB646 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB646

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

★

The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module

on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

MC-458CB646EFB-A80

MC-458CB646EFB-A10

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

6 ns

7 ns

6 ns

7 ns

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

MC-458CB646PFB-A80

MC-458CB646PFB-A10

★

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (sequential / interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ± 10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M13049EJ7V0DS00 (7th edition)

Date Published January 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1997

12 3 4 5 6 7...16

中文翻译

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与MC-458CB646相关器件

型号	品牌	获取价格	描述	数据表
MC-458CB646EFB-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646EFB-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646EFB-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646EFB-A80	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646F-A10	ELPIDA	获取价格	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
MC-458CB646F-A80	NEC	获取价格	Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168
MC-458CB646F-A80	RENESAS	获取价格	MEMORY MODULE,SDRAM,8MX64,CMOS,DIMM,168PIN,PLASTIC
MC-458CB646LFA-A10	RENESAS	获取价格	MEMORY MODULE,SDRAM,8MX64,CMOS,DIMM,168PIN,PLASTIC
MC-458CB646LFA-A80	ELPIDA	获取价格	Synchronous DRAM Module, 8MX64, 6ns, MOS, DIMM-168
MC-458CB646PFB-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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