Datasheet > MC-458CB64PSB-A10B

MC-458CB64PSB-A10B

更新时间： 2024-11-25 22:46:23

品牌	Logo	应用领域
日电电子 - NEC		内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
16页	127K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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中文翻译

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数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB64ESB, 458CB64PSB

8M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module

(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS Latency

Clock frequency

(MAX.)

Access time from CLK

(MIN.)

MC-458CB64ESB-A10B

CL = 3

CL = 2

CL = 3

CL = 2

100 MHz

67 MHz

100 MHz

67 MHz

7 ns

8 ns

7 ns

8 ns

★

MC-458CB64PSB-A10B

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single +3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark • shows major revised points.

Document No. M12263EJAV0DS00 (10th edition)

Date Published February 2000 NS CP(K)

Printed in Japan

1996

12 3 4 5 6 7...16

中文翻译

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与MC-458CB64PSB-A10B相关器件

型号	品牌	获取价格	描述	数据表
MC-458CD641LS-A10L	NEC	获取价格	Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
MC-458CD641LS-A80	NEC	获取价格	Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
MC458F	MOTOROLA	获取价格	NAND Gate, TTL, CDFP14
MC458P	MOTOROLA	获取价格	NAND Gate, TTL, PDIP14
MC459	ETC	获取价格	4 wide 3-2-2-3 input expander for and-or-invert gae
MC-45D16CA721	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721	NEC	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C75	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C75	NEC	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C80	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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