5秒后页面跳转
MC-45D16CD641KS PDF预览

MC-45D16CD641KS

更新时间: 2024-11-26 11:11:15
品牌 Logo 应用领域
尔必达 - ELPIDA 双倍数据速率
页数 文件大小 规格书
14页 172K
描述
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

MC-45D16CD641KS 数据手册

 浏览型号MC-45D16CD641KS的Datasheet PDF文件第2页浏览型号MC-45D16CD641KS的Datasheet PDF文件第3页浏览型号MC-45D16CD641KS的Datasheet PDF文件第4页浏览型号MC-45D16CD641KS的Datasheet PDF文件第5页浏览型号MC-45D16CD641KS的Datasheet PDF文件第6页浏览型号MC-45D16CD641KS的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-45D16CD641KS  
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE  
(SO DIMM)  
Description  
The MC-45D16CD641KS is a 16,777,216 words by 64 bits DDR synchronous dynamic RAM module on which 8  
pieces of 128M DDR SDRAM: µPD45D128164 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
16,777,216 words by 64 bits organization  
Clock frequency  
Part number  
MC-45D16CD641KS-C75  
MC-45D16CD641KS-C80  
/CAS latency  
Clock frequency  
(MAX.)  
Module type  
CL = 2.5  
CL = 2  
133 MHz  
100 MHz  
125 MHz  
100 MHz  
DDR SDRAM  
SO DIMM  
CL = 2.5  
CL = 2  
Design specification  
Rev.1.0 compliant  
Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge  
Double Data Rate interface  
Differential CLK (/CLK) input  
Data inputs and DM are synchronized with both edges of DQS  
Data outputs and DQS are synchronized with a cross point of CLK and /CLK  
Quad internal banks operation  
Possible to assert random column address in every clock cycle  
Programmable Mode register set  
/CAS latency (2, 2.5)  
Burst length (2, 4, 8)  
Wrap sequence (Sequential / Interleave)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
2.5 V ± 0.2 V Power supply for VDD  
2.5 V ± 0.2 V Power supply for VDDQ  
SSTL_2 compatible with all signals  
4,096 refresh cycles / 64 ms  
Burst termination by Precharge command and Burst stop command  
200-pin dual in-line memory module (Pin pitch = 0.6 mm)  
Unbuffered type  
Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0187N10 (Ver. 1.0)  
Date Published August 2001 (K)  
Printed in Japan  
C
Elpida Memory, Inc. 2001  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

与MC-45D16CD641KS相关器件

型号 品牌 获取价格 描述 数据表
MC-45D16CD641KS-C75 ELPIDA

获取价格

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-45D16CD641KS-C80 ELPIDA

获取价格

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-45D16DA721 ELPIDA

获取价格

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KFA-C75 ELPIDA

获取价格

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KFA-C80 ELPIDA

获取价格

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KF-C75 ELPIDA

获取价格

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KF-C80 ELPIDA

获取价格

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32CC721 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D32CC721 NEC

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D32CC721KFA-C75 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE