5秒后页面跳转
MC-45D32CD641KFA-C75 PDF预览

MC-45D32CD641KFA-C75

更新时间: 2024-11-04 22:09:59
品牌 Logo 应用领域
日电电子 - NEC 内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
16页 251K
描述
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-45D32CD641KFA-C75 数据手册

 浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第2页浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第3页浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第4页浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第5页浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第6页浏览型号MC-45D32CD641KFA-C75的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-45D32CD641  
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-45D32CD641 is a 33,554,432 words by 64 bits DDR synchronous dynamic RAM module on which 16  
pieces of 128M DDR SDRAM: µPD45D128842 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
33,554,432 words by 64 bits organization  
Clock frequency  
Part number  
/CAS latency  
Clock frequency  
(MAX.)  
Module type  
MC-45D32CD641KFA-C75  
MC-45D32CD641KFA-C80  
CL = 2.5  
CL = 2  
133 MHz  
100 MHz  
125 MHz  
100 MHz  
DDR SDRAM  
Unbuffered DIMM  
Design specification  
Rev.0.9 compliant  
CL = 2.5  
CL = 2  
Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge  
Double Data Rate interface  
Differential CLK (/CLK) input  
Data inputs and DM are synchronized with both edges of DQS  
Data outputs and DQS are synchronized with a cross point of CLK and /CLK  
Quad internal banks operation  
Possible to assert random column address in every clock cycle  
Programmable Mode register set  
/CAS latency (2, 2.5)  
Burst length (2, 4, 8)  
Wrap sequence (Sequential / Interleave)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
DD  
2.5 V ± 0.2 V Power supply for V  
DD  
2.5 V ± 0.2 V Power supply for V  
Q
SSTL_2 compatible with all signals  
4,096 refresh cycles / 64 ms  
Burst termination by Precharge command and Burst stop command  
184-pin dual in-line memory module (Pin pitch = 1.27 mm)  
Unbuffered type  
Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14899EJ1V0DS00 (1st edition)  
Date Published June 2000 NS CP(K)  
Printed in Japan  
2000  
©

与MC-45D32CD641KFA-C75相关器件

型号 品牌 获取价格 描述 数据表
MC-45D32CD641KFA-C80 ELPIDA

获取价格

32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D32CD641KFA-C80 NEC

获取价格

32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D32DA721 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DA721KFA-C75 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DA721KFA-C80 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DA721KF-C75 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DA721KF-C8 ELPIDA

获取价格

DDR DRAM Module, 32MX72, 0.8ns, CMOS, SOCKET TYPE, DIMM-184
MC-45D32DA721KF-C80 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DC721 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32DC721KFA-C75 ELPIDA

获取价格

32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE