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MC-45V16AD641EF-A10

更新时间： 2024-11-25 22:09:43
品牌 Logo 应用领域
日电电子 - NEC 内存集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
16页 161K
描述
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-45V16AD641EF-A10 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-45V16AD641  
16M-WORD BY 64-BIT  
VirtualChannelTM SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-45V16AD641 is a 16,777,216 words by 64 bits VirtualChannel synchronous dynamic RAM module on  
which 16 pieces of 64M VirtualChannel SDRAM : µPD4565821 are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 16,777,216 words by 64 bits organization  
• Clock frequency and access time from CLK  
Part number  
Clock  
Access  
time  
Maximum supply current mA  
Operating  
Read  
latency frequency  
Refresh  
MHz  
from CLK Prefetch Restore  
ns (MAX.)  
Channel  
Auto  
Self  
16  
(MAX.)  
read / write (Burst)  
MC-45V16AD641KF-A75  
MC-45V16AD641KF-A10  
MC-45V16AD641EF-A75  
MC-45V16AD641EF-A10  
2
133  
100  
133  
100  
5.4  
6
880  
840  
880  
840  
720  
600  
720  
600  
1280  
1120  
1280  
1120  
5.4  
6
• Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Dual internal banks controlled by BA0 (Bank Select)  
• Programmable Wrap sequence (Sequential / Interleave)  
• Programmable burst length (1, 2, 4, 8 and 16)  
• Read latency (2)  
★
• Prefetch Read latency (4)  
• Auto precharge and without auto precharge  
• Auto refresh and Self refresh  
• Single 3.3 V ± 0.3 V power supply  
• Interface: LVTTL  
• Refresh cycle: 4K cycles / 64 ms  
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
• Unbuffered type  
• Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M13823EJ6V0DS00 (6th edition)  
Date Published June 2000 NS CP (K)  
Printed in Japan  
The mark • shows major revised points.  
1998  
©
1234567...16

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与MC-45V16AD641EF-A10相关器件

型号 品牌 获取价格 描述 数据表
MC-45V16AD641EF-A15 RENESAS

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 		MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,16MX64,CMOS,DIMM,168PIN,PLASTIC
MC-45V16AD641EF-A75 NEC

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 		16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V16AD641EF-A75 RENESAS

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 		MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,16MX64,CMOS,DIMM,168PIN,PLASTIC
MC-45V16AD641KF-A10 NEC

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 		16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V16AD641KF-A75 NEC

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 		16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V16AD642KS ELPIDA

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 		16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
MC-45V16AD642KS-A75 ELPIDA

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 		16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
MC-45V32AD642 ELPIDA

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 		32M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V32AD642KF-A75 ELPIDA

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 		32M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V8AB641 NEC

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 		8M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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