Datasheet > MC-45V8AD641ES-A10

MC-45V8AD641ES-A10

更新时间： 2024-09-17 06:39:23

品牌	Logo	应用领域
瑞萨 - RENESAS		动态存储器
页数	文件大小	规格书
16页	245K
描述
MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-45V8AD641KS, 45V8AD641ES

8M-WORD BY 64-BIT

VirtualChannel^TMSYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-45V8AD641KS, 45V8AD641ES is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM

module (small outline DIMM) on which 8 pieces of 64M VirtualChannel SDRAM : µPD4565161 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

Clock

Access

time

Maximum supply current

Operating

Read

latency frequency

(MAX.)

Refresh

from CLK

(MAX.)

Channel

read / write

(Burst)

Prefetch

Restore

Auto

Self

MC-45V8AD641KS-A75

MC-45V8AD641KS-A10

MC-45V8AD641KS-A15

MC-45V8AD641ES-A75

MC-45V8AD641ES-A10

MC-45V8AD641ES-A15

133 MHz

100 MHz

67 MHz

5.4 ns

6 ns

440 mA

480 mA

400 mA

340 mA

480 mA

400 mA

340 mA

640 mA

560 mA

540 mA

640 mA

560 mA

540 mA

8 mA

420 mA

380 mA

440 mA

420 mA

380 mA

12 ns

5.4 ns

6 ns

133 MHz

100 MHz

67 MHz

•

12 ns

• Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Dual internal banks controlled by BA0 (Bank Select)

• Programmable Wrap sequence (Sequential / Interleave)

• Programmable burst length (1, 2, 4, 8 and 16)

• Prefetch Read latency (4)

• Auto precharge and without auto precharge

• Auto refresh and Self refresh

• Single 3.3 V ± 0.3 V power supply

• Interface: LVTTL

• Refresh cycle: 4K cycles / 64 ms

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M13836EJ5V0DS00 (5th edition)

Date Published December 1999 NS CP (K)

Printed in Japan

The mark • shows major revised points.

1998

12 3 4 5 6 7...16

中文翻译

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与MC-45V8AD641ES-A10相关器件

型号	品牌	获取价格	描述	数据表
MC-45V8AD641ES-A15	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC-45V8AD641ES-A75	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC4609	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
MC4610	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
MC4611	FREESCALE	获取价格	N & P-Channel 60-V (D-S) MOSFET Fast switching speed
MC4612	FREESCALE	获取价格	N & P-Channel 60-V (D-S) MOSFET White LED boost converters
MC4614A	FREESCALE	获取价格	N & P-Channel 40-V (D-S) MOSFET Fast switching speed
MC4619	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
MC461A	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, 30V V(RRM), Silicon
MC4620	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability

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