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MC4609 PDF预览

MC4609

更新时间: 2024-11-28 12:26:43
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
4页 321K
描述
P & N-Channel 30-V (D-S) MOSFET High power and current handling capability

MC4609 数据手册

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Freescale  
AO4609/ MC4609  
P & N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
These miniature surface mount MOSFETs utilize  
High Cell Density process. Low rDS(on) assures  
minimal power loss and conserves energy, making  
this device ideal for use in power management  
circuitry. Typical applications are PWMDC-DC  
converters, power management in portable and  
battery-powered products such as computers,  
printers, battery charger, telecommunication power  
system, and telephones power system.  
VDS (V)  
ID (A)  
7.2  
rDS(on) m()  
28 @ VGS = 4.5V  
18 @ VGS = 10V  
30  
8.5  
-2.6  
-3.2  
250 @ VGS = -2.5V  
170 @ VGS = -4.5V  
-20  
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
1
2
3
4
8
7
Miniature SO-8 Surface Mount Package  
Saves Board Space  
High power and current handling capability  
6
5
Low side high current DC-DC Converter  
applications  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Param er Symbol N-Channel P-Channel Units  
et  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
20  
10  
-20  
-12  
V
TA=25oC  
TA=70oC  
-3.5  
-2.3  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
7
IDM  
IS  
±50  
2.3  
2.1  
±5  
0
Continuous Source Current (Diode Conduction)a  
A
W
oC  
-2.1  
2.1  
TA=25oC  
TA=70oC  
Power Dissipationa  
PD  
1.3  
1.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
Maximum Junction-to-Casea  
Maximum Junction-to-Ambienta  
oC/W  
oC/W  
RθJC  
RθJA  
t <= 5 sec  
t <= 5 sec  
40  
60  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
1

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