Datasheet > MC-45V8AB641KF-A10

MC-45V8AB641KF-A10

更新时间： 2024-11-26 19:46:47

品牌	Logo	应用领域
日电电子 - NEC		动态存储器内存集成电路
页数	文件大小	规格书
16页	149K
描述
Synchronous DRAM Module, 8MX64, 6ns, MOS, DIMM-168

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MC-45V8AB641KF-A10 技术参数

生命周期：	Obsolete	零件包装代码：	DIMM
包装说明：	,	针数：	168
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.28	风险等级：	5.84
访问模式：	DUAL BANK PAGE BURST	最长访问时间：	6 ns
JESD-30 代码：	R-XDMA-N168	内存密度：	536870912 bit
内存集成电路类型：	SYNCHRONOUS DRAM MODULE	内存宽度：	64
功能数量：	1	端口数量：	1
端子数量：	168	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	8MX64	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
认证状态：	Not Qualified	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	MOS
温度等级：	COMMERCIAL	端子形式：	NO LEAD
端子位置：	DUAL	Base Number Matches：	1

MC-45V8AB641KF-A10 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-45V8AB641

8M-WORD BY 64-BIT

VirtualChannel^TMSYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 4

pieces of 128M VirtualChannel SDRAM : µPD45125161 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

Read

Clock

Access

time

Maximum supply current mA

Operating

latency frequency

Refresh

Auto

MHz (MAX.) from CLK Prefetch

ns (MAX.)

Restore

Channel

Self

read / write (Burst)

•

MC-45V8AB641KFA-A75

MC-45V8AB641KFA-A10

133

100

5.4

600

520

300

920

880

• Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Dual internal banks controlled by BA0 (Bank Select)

• Programmable wrap sequence (sequential / interleave)

• Programmable burst length (1, 2, 4, 8 and 16)

• Read latency (2)

•

• Prefetch read latency (4)

• Auto precharge and without auto precharge

• Auto refresh and self refresh

• Single 3.3 V ± 0.3 V power supply

• Interface: LVTTL

• Refresh cycle: 4K cycles/64 ms

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark • shows major revised points.

Document No. M14619EJ2V0DS00 (2nd edition)

Date Published June 2000 NS CP (K)

Printed in Japan

1999

12 3 4 5 6 7...16

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与MC-45V8AB641KF-A10相关器件

型号	品牌	获取价格	描述	数据表
MC-45V8AB641KF-A15	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,168PIN,PLASTIC
MC-45V8AB641KFA-A10	NEC	获取价格	8M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V8AB641KFA-A75	NEC	获取价格	8M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45V8AB642KS	ELPIDA	获取价格	8M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
MC-45V8AB642KS-A75	ELPIDA	获取价格	8M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
MC-45V8AD641ES-A10	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC-45V8AD641ES-A15	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC-45V8AD641ES-A75	RENESAS	获取价格	MEMORY MODULE,SDRAM,VIRTUAL CHANNEL,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC4609	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
MC4610	FREESCALE	获取价格	P & N-Channel 30-V (D-S) MOSFET High power and current handling capability

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