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MC-45V8AB641KFA-A10 PDF预览

MC-45V8AB641KFA-A10

更新时间: 2024-11-05 22:05:15
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
16页 144K
描述
8M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-45V8AB641KFA-A10 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-45V8AB641  
8M-WORD BY 64-BIT  
VirtualChannelTM SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 4  
pieces of 128M VirtualChannel SDRAM : µPD45125161 are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
8,388,608 words by 64 bits organization  
Clock frequency and access time from CLK  
Part number  
Read  
Clock  
Access  
time  
Maximum supply current mA  
Operating  
latency frequency  
Refresh  
Auto  
MHz (MAX.) from CLK Prefetch  
ns (MAX.)  
Restore  
Channel  
Self  
8
read / write (Burst)  
MC-45V8AB641KFA-A75  
MC-45V8AB641KFA-A10  
2
133  
100  
5.4  
6
600  
520  
300  
300  
920  
880  
Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Dual internal banks controlled by BA0 (Bank Select)  
Programmable wrap sequence (sequential / interleave)  
Programmable burst length (1, 2, 4, 8 and 16)  
Read latency (2)  
Prefetch read latency (4)  
Auto precharge and without auto precharge  
Auto refresh and self refresh  
Single 3.3 V ± 0.3 V power supply  
Interface: LVTTL  
Refresh cycle: 4K cycles/64 ms  
168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
Unbuffered type  
Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark shows major revised points.  
Document No. M14619EJ2V0DS00 (2nd edition)  
Date Published June 2000 NS CP (K)  
Printed in Japan  
1999  
©

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