Datasheet > MC-45D16CB641KF-C80

MC-45D16CB641KF-C80

更新时间： 2024-11-25 22:09:59

品牌	Logo	应用领域
日电电子 - NEC		双倍数据速率
页数	文件大小	规格书
16页	245K
描述
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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中文翻译

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

MC-45D16CB641

16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-45D16CB641 is a 16,777,216 words by 64 bits DDR synchronous dynamic RAM module on which 8 pieces

of 128M DDR SDRAM: µPD45D128842 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency

Part number

MC-45D16CB641KF-C75

MC-45D16CB641KF-C80

/CAS latency

Clock frequency

(MAX.)

Module type

CL = 2.5

CL = 2

133 MHz

100 MHz

125 MHz

100 MHz

DDR SDRAM

Unbuffered DIMM

Design specification

Rev.0.9 compliant

CL = 2.5

CL = 2

• Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge

• Double Data Rate interface

Differential CLK (/CLK) input

Data inputs and DM are synchronized with both edges of DQS

Data outputs and DQS are synchronized with a cross point of CLK and /CLK

• Quad internal banks operation

• Possible to assert random column address in every clock cycle

• Programmable Mode register set

/CAS latency (2, 2.5)

Burst length (2, 4, 8)

Wrap sequence (Sequential / Interleave)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• 2.5 V ± 0.2 V Power supply for V

• SSTL_2 compatible with all signals

• 4,096 refresh cycles / 64 ms

• Burst termination by Precharge command and Burst stop command

• 184-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14897EJ2V0DS00 (2nd edition)

Date Published June 2000 NS CP(K)

Printed in Japan

The mark shows major revised points.

★

2000

12 3 4 5 6 7...16

中文翻译

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与MC-45D16CB641KF-C80相关器件

型号	品牌	获取价格	描述	数据表
MC-45D16CD641KS	ELPIDA	获取价格	16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-45D16CD641KS-C75	ELPIDA	获取价格	16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-45D16CD641KS-C80	ELPIDA	获取价格	16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-45D16DA721	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KFA-C75	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KFA-C80	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KF-C75	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D16DA721KF-C80	ELPIDA	获取价格	16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-45D32CC721	ELPIDA	获取价格	32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D32CC721	NEC	获取价格	32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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