MC-458CB646PFB-A10

更新时间： 2024-11-04 11:11:15

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
16页	143K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB646

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-458CB646EFB, MC-458CB646PFB and MC-458CB646XFB are 8,388,608 words by 64 bits synchronous

dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

MC-458CB646EFB-A80

MC-458CB646EFB-A10

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

6 ns

7 ns

6 ns

7 ns

6 ns

7 ns

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

MC-458CB646PFB-A80

MC-458CB646PFB-A10

MC-458CB646XFB-A80

MC-458CB646XFB-A10

125 MHz

100 MHz

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (sequential / interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ± 10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0063N10 (1st edition)

This product became EOL in March, 2004.

(Previous No. M13049EJ8V0DS00)

Date Published January 2001 CP (K)

Printed in Japan

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...16

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与MC-458CB646PFB-A10相关器件

型号	品牌	获取价格	描述	数据表
MC-458CB646PFB-A80	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646PFB-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646XFB-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646XFB-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB647	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB647	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB647EFA-A75	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB647EFA-A75	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB647LF-A75	NEC	获取价格	Synchronous DRAM Module, 8MX64, 5.4ns, MOS, 34.93 MM HEIGHT, 1.27 MM PITCH, DIMM-168
MC-458CB647PFA-A75	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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