Datasheet > MC-458CB641PS-A80

MC-458CB641PS-A80

更新时间： 2024-11-25 22:24:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	139K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC-458CB641PS-A80 数据手册

浏览型号MC-458CB641PS-A80的Datasheet PDF文件第2页

浏览型号MC-458CB641PS-A80的Datasheet PDF文件第3页

浏览型号MC-458CB641PS-A80的Datasheet PDF文件第4页

浏览型号MC-458CB641PS-A80的Datasheet PDF文件第5页

浏览型号MC-458CB641PS-A80的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB641ES, 458CB641PS

8M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module

(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-458CB641ES-A80

6 ns

7 ns

6 ns

7 ns

CL = 2

100 MHz

MC-458CB641ES-A10

MC-458CB641PS-A80

MC-458CB641PS-A10

CL = 3

100 MHz

CL = 2

77 MHz

★

CL = 3

125 MHz

CL = 2

100 MHz

CL = 3

100 MHz

CL = 2

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and Full Page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14015EJ4V0DS00 (4th edition)

Date Published February 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999

12 3 4 5 6 7...16

中文翻译

下载PDF

与MC-458CB641PS-A80相关器件

型号	品牌	获取价格	描述	数据表
MC-458CB641XS	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641XS-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641XS-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS-A75	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS-A75L	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB646	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646EFB-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CB646EFB-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

与MC-458CB641PS-A80相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CB641PS-A80

MC-458CB641PS-A80 数据手册

与MC-458CB641PS-A80相关器件

与MC-458CB641PS-A80相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CB641PS-A80

MC-458CB641PS-A80 数据手册

与MC-458CB641PS-A80相关器件

与MC-458CB641PS-A80相关文章

您还可以找

您在本页遇到什么问题？