5秒后页面跳转
MC-458CB641PS PDF预览

MC-458CB641PS

更新时间: 2024-11-25 22:24:27
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
16页 139K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

MC-458CB641PS 数据手册

 浏览型号MC-458CB641PS的Datasheet PDF文件第2页浏览型号MC-458CB641PS的Datasheet PDF文件第3页浏览型号MC-458CB641PS的Datasheet PDF文件第4页浏览型号MC-458CB641PS的Datasheet PDF文件第5页浏览型号MC-458CB641PS的Datasheet PDF文件第6页浏览型号MC-458CB641PS的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-458CB641ES, 458CB641PS  
8M-WORD BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)  
Description  
The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module  
(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.  
These modules provide high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
8,388,608 words by 64 bits organization  
Clock frequency and access time from CLK  
Part number  
/CAS latency  
CL = 3  
Clock frequency (MAX.)  
125 MHz  
Access time from CLK (MAX.)  
MC-458CB641ES-A80  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
CL = 2  
100 MHz  
MC-458CB641ES-A10  
MC-458CB641PS-A80  
MC-458CB641PS-A10  
CL = 3  
100 MHz  
CL = 2  
77 MHz  
CL = 3  
125 MHz  
CL = 2  
100 MHz  
CL = 3  
100 MHz  
CL = 2  
77 MHz  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0, BA1 (Bank Select)  
Programmable burst-length: 1, 2, 4, 8 and Full Page  
Programmable wrap sequence (Sequential / Interleave)  
Programmable /CAS latency (2, 3)  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
Single 3.3V ±0.3V power supply  
LVTTL compatible  
4,096 refresh cycles/64 ms  
Burst termination by Burst Stop command and Precharge command  
144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)  
Unbuffered type  
Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14015EJ4V0DS00 (4th edition)  
Date Published February 2000 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©

与MC-458CB641PS相关器件

型号 品牌 获取价格 描述 数据表
MC-458CB641PS-A10 ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A10 NEC

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641PS-A80 ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A80 NEC

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641XS ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641XS-A10 ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641XS-A80 ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS-A75 ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB642XS-A75L ELPIDA

获取价格

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)