Datasheet > KTK5131V

KTK5131V

更新时间： 2024-11-30 11:32:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	88K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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KTK5131V 数据手册

KTK5131V

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

2.5 Gate Drive.

Low Threshold Voltage : V_th=0.5 1.5V.

High Speed.

DIM MILLIMETERS

1.2+0.05

0.8 0.05

Small Package.

0.5+0.05

0.3 0.05

Enhancement-Mode.

1.2 0.05

0.8+0.05

0.40

0.12 0.05

0.2+0.05

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_DS

V_GSS

I_D

RATING

UNIT

Drain-Source Voltage

Gate-Source Voltage

1. SOURCE

2. GATE

DC Drain Current

3. DRAIN

P_D

Drain Power Dissipation

Channel Temperature

100

150

T_ch

VSM

T_stg

Storage Temperature Range

-55 150

EQUIVALENT CIRCUIT

Marking

Type Name

K A

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

I_GSS

TEST CONDITION

16V, V_DS=0V

MIN.

TYP.

MAX.

UNIT

V_GS

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Drain Cut-off Current

I_D=100 A, V_GS=0V

V_DS=30V, V_GS=0V

V_th

V_DS=3V, I_D=0.1mA

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

0.5

1.5

|Y_fs|

V_DS=3V, I_D=10mA

R_DS(ON)

C_iss

I_D=10mA, V_GS=2.5V

V_DS=3V, V_GS=0V, f=1MHz

5.5

1.6

6.5

140

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

t_on

Turn-on Time

Turn-off Time

Switching

Time

V_DD=3V, I_D=10mA, V_GS=0 2.5V

t_off

2003. 7. 4

Revision No : 0

1/3

12 3

中文翻译

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