Datasheet > KTK596S

KTK596S

更新时间： 2024-11-19 22:32:03

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
5页	49K
描述
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)

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KTK596S 数据手册

KTK596S

SEMICONDUCTOR

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

CONDENSER MICROPHONE APPLICATION.

FEATURES

Expecially Suited for Use in Audio, Telephone.

Capacitor Microphones.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

Excellent Voltage Characteristics.

Excellent Transient Characteristics.

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.20 MIN

1.00+0.20/-0.10

SYMBOL

RATING

-20

UNIT

V_GDO

I_G

Gate-Drain Voltage

Gate Current

1. SOURCE

2. DRAIN

3. GATE

I_D

Drain Current

P_D

Drain Power Dissipation

Junction Temperature

Storage Temperature Range

150

T_j

150

T_stg

-55 150

SOT-23

Marking

Rank

DSS

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Gate-Drain Breakdown Voltage

Gate-Source Cut-off Voltage

Drain Current

SYMBOL

V_(BR)GDO

V_GS(OFF)

I_DSS(Note)

| y_fs|

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_G=-100 A

-20

-1.5

320

V_DS=5V, I_D=1 A

-0.6

V_DS=5V, V_GS=0

150

0.4

V_DS=5V, V_GS=0, f=1kHz

V_DS=5V, V_GS=0, f=1MHz

Foward Transfer Admittance

Input Capacitance

1.2

3.5

0.65

C_iss

C_rss

Reverse Transfer Capacitance

Note : I_DSSClassification Y(1) : 150~240, GR(2) : 210~320

2002. 9. 17

Revision No : 3

1/5

12 3 4 5

中文翻译

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