Datasheet > KTK596

KTK596

更新时间： 2024-09-14 22:32:03

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
3页	44K
描述
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)

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技术参数
数据手册

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KTK596 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
FET 技术：	JUNCTION	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.1 W	子类别：	Other Transistors
表面贴装：	NO

KTK596 数据手册

KTK596

SEMICONDUCTOR

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

CONDENSER MICROPHONE APPLICATION.

FEATURES

Expecially Suited for Use in Audio, Telephone.

Capacitor Microphones.

Excellent Voltage Characteristics.

Excellent Transient Characteristics.

DIM

MILLIMETERS

3.20 MAX

4.30 MAX

0.55 MAX

2.40+0.15

1.27

2.30

14.00 0.50

0.60 MAX

1.05

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

1.45

SYMBOL

RATING

-20

UNIT

0.80

V_GDO

I_G

Gate-Drain Voltage

Gate Current

0.55 MAX

0.75

1. SOURCE

2. GATE

I_D

Drain Current

P_D

Drain Power Dissipation

Junction Temperature

Storage Temperature Range

400

3. DRAIN

T_j

150

T_stg

-55 150

TO-92M

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Gate-Drain Breakdown Voltage

Gate-Source Cut-off Voltage

Drain Current

SYMBOL

V_(BR)GDO

V_GS(OFF)

I_DSS(Note)

| y_fs|

TEST CONDITION

MIN.

-20

TYP.

MAX.

UNIT

I_G=-100 A

-1.5

480

V_DS=5V, I_D=1 A

-0.6

V_DS=5V, V_GS=0

100

0.4

V_DS=5V, V_GS=0, f=1kHz

V_DS=5V, V_GS=0, f=1MHz

Foward Transfer Admittance

Input Capacitance

1.2

3.5

0.65

C_iss

C_rss

Reverse Transfer Capacitance

Note : I_DSSClassification A:100 170, B:150 240, C:210 350, C1:210~310, C2:290~350, D:320 480

2002. 8. 7

Revision No : 3

1/3

12 3

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