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KTK920BT PDF预览

KTK920BT

更新时间: 2024-11-06 11:32:23
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 424K
描述
TSQ PACKAGE

KTK920BT 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
风险等级:5.71配置:SINGLE WITH BUILT-IN DIODE
最大漏极电流 (ID):0.01 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KTK920BT 数据手册

  
SEMICONDUCTOR  
MARKING SPECIFICATION  
KTK920BT  
TSQ PACKAGE  
1. Marking method  
Laser Marking  
2. Marking  
2
1
No.  
Item  
Marking  
MB  
Description  
KTK920BT  
Device Mark  
Lot No.*  
2007. 1st Week  
[0:1st Character, A:2nd Character]  
0A  
Note) * Lot No. marking method  
Lot No.  
Description  
Remark  
01 : 2006. 1st Week,  
02 : 2006. 2nd Week  
01, 02 ....51, 52  
0A, 0B ....5A, 5B**  
J1, J2 ....E1, E2**  
JA, JB ....EA, EB**  
51 : 2006. 51th Week,  
52 : 2006. 52th Week.  
0A : 2007. 1st Week,  
0B : 2007. 2nd Week  
Rotation for 4 years :  
5A : 2007. 51th Week,  
5B : 2007. 52th Week.  
01...52 : ...2006, 2010, 2014...  
0A...5B : ...2007, 20011, 2015...  
J1...E2 : ...2008, 2012, 2016...  
JA...EB : ...2009, 2013, 2017...  
J1 : 2008. 1st Week,  
J2 : 2008. 2nd Week  
E1 : 2008. 51th Week,  
E2 : 2008. 52th Week.  
JA : 2009. 1st Week,  
JB : 2009. 2nd Week  
EA : 2009. 51th Week,  
EB : 2009. 52th Week.  
** : Meaning (A=1, B=2, C=3, D=4, E=5, F=6, G=7, H=8, I=9, J=0)  
2007. 8. 31  
Revision No : 0  
1/1  

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