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KTK920U

更新时间: 2024-11-18 11:32:23
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 19K
描述
USQ PACKAGE

KTK920U 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.73配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:3 V最大漏极电流 (ID):0.01 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KTK920U 数据手册

  
SEMICONDUCTOR  
MARKING SPECIFICATION  
KTK920U  
USQ PACKAGE  
1. Marking method  
Laser Marking  
2. Marking  
1
2
MA  
No.  
Item  
Marking  
Description  
KTK920U  
-
Device Mark  
hFE Grade  
MA  
-
Dot  
Pin 1 Indexs  
2006. 1st Week  
[0:1st Character, 1:2nd Character]  
* Lot No.  
01  
Note) * Lot No. marking method  
1
(A)  
2
(B)  
3
(C)  
4
(D)  
5
(E)  
6
(F)  
7
(G)  
8
(H)  
9
(I)  
0
(J)  
1 st Character  
Character  
arrangement  
A
(1)  
B
(2)  
C
(3)  
D
(4)  
E
(5)  
F
(6)  
G
(7)  
H
(8)  
I
(9)  
J
(0)  
2nd Character  
Year  
Marking (Week)  
Periode (Year)  
Remark  
1 st Year (2006)  
2 nd Year (2007)  
4 rd Year (2008)  
4 th Year (2009)  
01  
0A  
J1  
02  
51  
5A  
E1  
EA  
52  
5B  
E2  
EB  
2006-2010-2014...  
2007-2011-2015...  
2008-2012-2016...  
2009-2013-2017...  
0B  
J2  
Rotation for 4 years  
JA  
JB  
2008. 9. 8  
Revision No : 1  
1/1  

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