Datasheet > KTK5132U_08

KTK5132U_08

更新时间： 2024-11-30 11:32:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	50K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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KTK5132U_08 数据手册

KTK5132U

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

DIM MILLIMETERS

· 2.5 Gate Drive.

2.00+0.20

· Low Threshold Voltage : V_th=0.5∼ 1.5V.

· High Speed.

1.25+ 0.15

0.90 0.10

0.3+0.10/-0.05

2.10 + 0.20

· Small Package.

0.65

0.15+0.1/-0.06

1.30

· Enhancement-Mode.

0.00-0.10

0.70

0.42+0.10

MAXIMUM RATING (Ta=25℃)

0.10 MIN

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DS

RATING

UNIT

1. SOURCE

2. GATE

V_GSS

I_D

Gate-Source Voltage

DC Drain Current

±20

100

3. DRAIN

℃

P_D*

T_ch

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

200

150

USM

T_stg

-55∼ 150

℃

Note) * Package Mounted On 99.5% Alumina 10×8×0.6㎜)

EQUIVALENT CIRCUIT

Marking

Lot No.

Type Name

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

I_GSS

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_GS=±16V, V_DS=0V

I_D=100μA, V_GS=0V

±1

μA

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Drain Cut-off Current

1.5

V_DS=30V, V_GS=0V

μA

V_th

V_DS=3V, I_D=0.1mA

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

0.5

|Y_fs|

V_DS=3V, I_D=10mA

R_DS(ON)

C_iss

I_D=10mA, V_GS=2.5V

V_DS=3V, V_GS=0V, f=1MHz

Ω

8.5

3.3

9.3

180

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

t_on

Turn-on Time

Turn-off Time

Switching Time

V_DD=5V, I_D=10mA, V_GS=0∼ 5V

t_off

2008. 9. 10

Revision No : 1

1/3

12 3

中文翻译

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