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KTK5132U_08 PDF预览

KTK5132U_08

更新时间: 2024-10-29 11:32:23
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
3页 50K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KTK5132U_08 数据手册

 浏览型号KTK5132U_08的Datasheet PDF文件第2页浏览型号KTK5132U_08的Datasheet PDF文件第3页 
KTK5132U  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
ULTRA-HIGH SPEED SWITCHING APPLICATIONS  
ANALOG SWITCH APPLICATIONS  
E
FEATURES  
M
B
M
DIM MILLIMETERS  
_
· 2.5 Gate Drive.  
A
B
C
D
E
2.00+0.20  
D
2
1
· Low Threshold Voltage : Vth=0.51.5V.  
· High Speed.  
_
1.25+ 0.15  
_
+
0.90 0.10  
3
0.3+0.10/-0.05  
_
2.10 + 0.20  
· Small Package.  
G
H
J
0.65  
0.15+0.1/-0.06  
1.30  
· Enhancement-Mode.  
K
L
0.00-0.10  
0.70  
H
_
0.42+0.10  
M
N
MAXIMUM RATING (Ta=25)  
0.10 MIN  
N
N
K
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
VDS  
RATING  
30  
UNIT  
V
1. SOURCE  
2. GATE  
VGSS  
ID  
Gate-Source Voltage  
DC Drain Current  
V
±20  
100  
3. DRAIN  
mA  
mW  
PD *  
Tch  
Drain Power Dissipation  
Channel Temperature  
Storage Temperature Range  
200  
150  
USM  
Tstg  
-55150  
Note) * Package Mounted On 99.5% Alumina 10×8×0.6)  
EQUIVALENT CIRCUIT  
Marking  
D
Lot No.  
Type Name  
G
KB  
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.  
PLEASE HANDLE WITH CAUTION.  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Gate Leakage Current  
SYMBOL  
IGSS  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VGS=±16V, VDS=0V  
ID=100μA, VGS=0V  
-
30  
-
-
-
±1  
μA  
V
V(BR)DSS  
IDSS  
Drain-Source Breakdown Voltage  
Drain Cut-off Current  
-
1
1.5  
-
VDS=30V, VGS=0V  
-
μA  
V
Vth  
VDS=3V, ID=0.1mA  
Gate Threshold Voltage  
Forward Transfer Admittance  
Drain-Source ON Resistance  
Input Capacitance  
0.5  
25  
-
-
|Yfs|  
VDS=3V, ID=10mA  
-
mS  
RDS(ON)  
Ciss  
ID=10mA, VGS=2.5V  
VDS=3V, VGS=0V, f=1MHz  
VDS=3V, VGS=0V, f=1MHz  
VDS=3V, VGS=0V, f=1MHz  
4
7
-
-
8.5  
3.3  
9.3  
50  
180  
pF  
pF  
pF  
nS  
nS  
Crss  
Reverse Transfer Capacitance  
Output Capacitance  
-
-
Coss  
-
-
ton  
Turn-on Time  
Turn-off Time  
-
-
Switching Time  
VDD=5V, ID=10mA, VGS=05V  
toff  
-
-
2008. 9. 10  
Revision No : 1  
1/3  

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