Datasheet > KTK5162

KTK5162

更新时间： 2024-11-19 22:32:03

品牌	Logo	应用领域
KEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
3页	82K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)

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中文翻译

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数据手册

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KTK5162 数据手册

KTK5162S

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

EATURES

DIM

MILLIMETERS

ᴌ2.5 Gate Drive.

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

ᴌLow Threshold Voltage : V_th=0.5ᴕ1.5V.

ᴌHigh Speed.

ᴌSmall Package.

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

ᴌEnhancement-Mode.

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

MAXIMUM RATINGS (Ta=25ᴱ)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DS

V_GSS

I_D

RATING

UNIT

1. SOURCE

2. GATE

Gate-Source Voltage

DC Drain Current

ᴦ20

100

3. DRAIN

ᴱ

P_D

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

200

SOT-23

T_ch

150

T_stg

-55ᴕ150

ᴱ

EQUIVALENT CIRCUIT

Marking

Lot No.

Type Name

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

I_GSS

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_GS=ᴦ16V, V_DS=0V

I_D=100ỌA, V_GS=0V

ᴦ1

ỌA

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Drain Cut-off Current

V_DS=60V, V_GS=0V

ỌA

V_th

V_DS=3V, I_D=0.1mA

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

0.5

1.5

|Y_fs|

V_DS=10V, I_D=50mA

120

6.2

1.5

4.4

105

R_DS(ON)

C_iss

I_D=10mA, V_GS=2.5V

ή

V_DS=10V, V_GS=0V, f=1MHz

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

t_on

Turn-on Time

Turn-off Time

Switching Time

V_DD=25V, I_D=50mA, V_GS=0ᴕ2.5V

t_off

2001. 10. 29

Revision No : 0

1/3

12 3

中文翻译

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