Datasheet > KTK5162S_09

KTK5162S_09

更新时间： 2024-11-18 11:32:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	44K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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KTK5162S_09 数据手册

KTK5162S

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

DIM

MILLIMETERS

· High Speed.

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

· Small Package.

· Enhancement-Mode.

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATINGS (Ta=25℃)

0.20 MIN

1.00+0.20/-0.10

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

RATING

UNIT

V_DS

V_GSS

I_D

Gate-Source Voltage

DC Drain Current

±20

100

1. SOURCE

2. GATE

℃

3. DRAIN

P_D

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

200

T_ch

150

T_stg

-55∼ 150

℃

SOT-23

EQUIVALENT CIRCUIT

Marking

Lot No.

Type Name

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

I_GSS

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_GS=±16V, V_DS=0V

I_D=100μA, V_GS=0V

±1

μA

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Drain Cut-off Current

V_DS=60V, V_GS=0V

μA

V_th

V_DS=10V, I_D=0.1mA

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

2.4

|Y_fs|

V_DS=10V, I_D=50mA

100

R_DS(ON)

C_iss

I_D=50mA, V_GS=10V

7.5

Ω

V_DS=10V, V_GS=0V, f=1MHz

6.2

1.5

4.4

0.021

0.18

μS

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

t_on

Turn-on Time

Turn-off Time

Switching Time

V_DD=25V, I_D=50mA, V_GS=0∼ 10V

t_off

2009. 2. 10

Revision No : 1

1/3

12 3

中文翻译

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