Datasheet > KTK5132

KTK5132

更新时间： 2024-10-28 22:32:03

品牌	Logo	应用领域
KEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
3页	430K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)

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数据手册

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KTK5132 数据手册

KTK5132E

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

MILLIMETERS

DIM

·2.5 Gate Drive.

1.60 0.10

·Low Threshold Voltage : V_th=0.5∼1.5V.

·High Speed.

0.85 0.10

0.70 0.10

0.27+0.10/-0.05

·Small Package.

1.60 0.10

1.00 0.10

·Enhancement-Mode.

0.50

0.13+0.05

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DS

V_GSS

I_D

RATING

UNIT

1. SOURCE

2. GATE

Gate-Source Voltage

DC Drain Current

±20

100

3. DRAIN

℃

P_D

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

100

T_ch

150

ESM

T_stg

-55∼150

℃

EQUIVALENT CIRCUIT

Marking

Type Name

K B

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Gate Leakage Current

SYMBOL

I_GSS

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_GS=±16V, V_DS=0V

I_D=100μA, V_GS=0V

±1

μA

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Drain Cut-off Current

1.5

V_DS=30V, V_GS=0V

μA

V_th

V_DS=3V, I_D=0.1mA

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

0.5

|Y_fs|

V_DS=3V, I_D=10mA

R_DS(ON)

C_iss

I_D=10mA, V_GS=2.5V

V_DS=3V, V_GS=0V, f=1MHz

Ω

8.5

3.3

9.3

180

C_rss

Reverse Transfer Capacitance

Output Capacitance

C_oss

t_on

Turn-on Time

Turn-off Time

Switching Time

V_DD=5V, I_D=10mA, V_GS=0∼5V

t_off

2002. 6. 17

Revision No : 0

1/3

12 3

中文翻译

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与KTK5132相关器件

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KTK5132E	KEC	获取价格	N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
KTK5132S	KEC	获取价格	N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
KTK5132U	KEC	获取价格	ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
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