Datasheet > KTD1624_08

KTD1624_08

更新时间： 2024-09-29 11:57:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	512K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTD1624_08 数据手册

SEMICONDUCTOR

KTD1624

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

VOLTAGE REGULATORS, RELAY DRIVERS

LAMP DRIVERS, ELECTRICAL EQUIPMENT

FEATURES

Adoption of MBIT processes.

Low collector-to-emitter saturation voltage.

Fast switching speed.

Large current capacity and wide ASO.

Complementary to KTB1124.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Vollector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

SYMBOL

RATING

UNIT

V_CBO

V_CEO

V_EBO

I_C

I_CP

Collector Current(Pulse)

Base Current

I_B

600

500

P_C

Collector Power Dissipation

P_C*

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

* : Package mounted on ceramic substrate(250mm²0.8t)

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX. UNIT.

V_CB=40V, I_E=0

V_EB=4V, I_C=0

I_EBO

100

h_FE(1) (Note)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=2V, I_C=100

V_CE=2V, I_C=3A

I_C=2A, I_B=100

400

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.19

0.94

150

0.5

1.2

I_C=2A, I_B=100

V_CE=10V, I_C=50

V_CB=10V, f=1 , I_E=0

C_ob

Collector Output Capacitance

t_on

t_stg

t_f

Turn-on Time

650

Switching

Storage Time

Time

Fall Time

Note : h_FE(1) Classification A:100 200, B:140 280, C:200 400

2008. 3. 11

Revision No : 5

1/3

12 3

中文翻译

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