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KTD1898 PDF预览

KTD1898

更新时间: 2024-11-30 12:32:43
品牌 Logo 应用领域
TYSEMI 晶体晶体管PC
页数 文件大小 规格书
1页 74K
描述
Collector Power Dissipation: PC=500mW

KTD1898 数据手册

  
Product specification  
KTD1898  
Unit:mm  
SOT-89  
1.50 ±0.1  
4.50±0.1  
1.80±0.1  
Features  
Collector Power Dissipation: PC=500mW  
Collector Current: IC=1A  
3
1
2
0.44±0.1  
0.48±0.1  
0.53±0.1  
3.00±0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
100  
80  
V
5
1
V
Collector Current  
A
Collector Power Dissipation  
Junction Temperature  
PC  
500  
mW  
Tj  
150  
Storage Temperature Range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
Test conditons  
IC=1mA, IB=0  
Min  
80  
Typ Max  
Unit  
V
V(BR)CEO  
ICBO  
IEBO  
VCB=80V, IE=0  
VEB=4V, IC=0  
1
μA  
μA  
1
400  
DC Current Gain  
hFE  
VCE=3V, IC=500mA  
IC=500mA, IB=20mA  
VCE=10V, IC=10mA  
VCB=10V, IE=0, f=1MHz  
70  
Collector-Emitter Saturation Voltage  
Transition frequency  
VCE(sat)  
fT  
0.4  
V
100  
MHz  
pF  
Collector Output Capacitance  
Cob  
20  
hFE Classification  
Marking  
Rank  
hFE  
ZO  
O
ZR  
R
ZGR  
GR  
70140  
120240  
200400  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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