Datasheet > KTD1415_07

KTD1415_07

更新时间： 2024-02-17 03:04:20

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	460K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

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数据手册

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KTD1415_07 数据手册

SEMICONDUCTOR

KTD1415

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH POWER SWITCHING APPLICATIONS.

HAMMER DRIVER, PULSE MOTOR DRIVER

APPLICATIONS.

DIM MILLIMETERS

10.0+0.3

15.0+0.3

FEATURES

2.70 0.3

0.76+0.09/-0.05

High DC Current Gain : h_FE=2000(Min.) at V_CE=3V, I_C=3A.

Low Saturation Voltage : V_CE(sat)=1.5V(Max.) at I_C=3A.

3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

2.54+0.1

6.8 0.1

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

4.5 0.2

2.6+0.2

100

0.5 Typ

100

1. BASE

2. COLLECTOR

3. EMITTER

I_B

Base Current

0.2

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

TO-220IS

T_j

150

T_stg

Storage Temperature Range

-55 150

EQUIVALENT CIRCUIT

COLLECTOR

BASE

150

EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_CB=100V, I_E=0

100

3.0

I_EBO

V_EB=5V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

h_FE(1)

I_C=50mA, I_B=0

V_CE=3V, I_C=3A

V_CE=3V, I_C=7A

I_C=3A, I_B=6mA

I_C=7A, I_B=14mA

I_C=3A, I_B=6mA

Collector-Emitter Breakdown Voltage

100

2000

15000

DC Current Gain

h_FE(2)

1000

V_CE(sat)(1)

V_CE(sat)(2)

V_BE(sat)

0.9

1.2

1.5

2.0

2.5

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Turn-on Time

t_on

t_stg

t_f

OUTPUT

0.8

3.0

2.5

INPUT B1

Switching

Storage Time

Time

=-I =6mA

DUTY CYCLE 1%

=45V

Fall Time

2007. 5. 22

Revision No : 1

1/3

12 3

中文翻译

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