Datasheet > KTD1414_07

KTD1414_07

更新时间： 2024-02-15 04:34:44

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	454K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTD1414_07 数据手册

SEMICONDUCTOR

KTD1414

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATIONS.

HAMMER DRIVER, PULSE MOTOR DRIVER

APPLICATIONS.

DIM MILLIMETERS

10.0+0.3

15.0+0.3

FEATURES

2.70 0.3

0.76+0.09/-0.05

High DC Current Gain : h_FE=2000(Min.) at V_CE=2V, I_C=1A.

3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

2.54+0.1

6.8 0.1

4.5 0.2

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

2.6+0.2

0.5 Typ

1. BASE

2. COLLECTOR

3. EMITTER

I_B

Base Current

0.5

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

T_j

150

TO-220IS

T_stg

Storage Temperature Range

-55 150

EQUIVALENT CIRCUIT

COLLECTOR

BASE

300

4.5K

EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=100V, I_E=0

MIN.

TYP.

MAX.

UNIT

2.5

I_EBO

V_EB=5V, I_C=0

I_C=10mA, I_B=0

V_CE=2V, I_C=1A

V_CE=2V, I_C=3A

I_C=3A, I_B=6mA

Emitter Cut-off Current

V_(BR)CEO

h_FE(1)

Collector-Emitter Breakdown Voltage

2000

1000

DC Current Gain

h_FE(2)

V_CE(sat)

V_BE(sat)

Collector-Emitter

1.5

2.0

Saturation Voltage

Switching Time

Base-Emitter

Turn-on Time

t_on

t_stg

t_f

0.2

1.5

0.6

OUTPUT

20 sec

INPUT

Storage Time

Fall Time

=-I =6mA

=30V

DUTY CYCLE 1%

2007. 5. 22

Revision No : 2

1/2

中文翻译

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