Datasheet > KTB1423_07

KTB1423_07

更新时间： 2024-01-28 19:16:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	448K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

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数据手册

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KTB1423_07 数据手册

SEMICONDUCTOR

KTB1423

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATIONS.

HAMMER DRIVER, PULSE MOTOR DRIVER

APPLICATIONS.

DIM MILLIMETERS

10.0+0.3

15.0+0.3

FEATURES

2.70 0.3

0.76+0.09/-0.05

High DC Current Gain : h_FE=1000(Min.) at V_CE=-3V, I_C=-3A.

High Collector Breakdown Voltage : V_CEO=-120V (Min.)

Complementary to KTD1413.

Φ3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

2.54+0.1

6.8 0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

4.5 0.2

2.6+0.2

SYMBOL

V_CBO

V_CEO

V_EB0

I_C

RATING

-120

-5

UNIT

0.5 Typ

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

1. BASE

2. COLLECTOR

3. EMITTER

Collector Current

Pules

-5

I_CP

-8

TO-220IS

I_B

Base Current

-0.12

Collector Power Dissipation

P_C

(Tc=25

)

T_j

Junction Temperature

150

EQUIVALENT CIRCUIT

T_stg

Storage Temperature Range

-55 150

∼

120Ω

8kΩ

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=-100V, I_E=0

V_BE=-5V, I_C=0

-1

-2

I_EBO

Emitter Cut-off Current

V_(BR)CEO

h_FE(1)

h_FE(2)

I_C=-10mA, I_B=0

Collector-Emitter Breakdown Voltage

-120

V_CE=-3V, I_C=-0.5A

V_CE=-3V, I_C=-3A

I_C=-3A, I_B=-12mA

I_C=-5A, I_B=-20mA

V_CE=-3V, I_C=-3A

V_CB=-10V, I_E=0, f=1MHz

1000

DC Current Gain

1000

V_CE(sat)

V_BE

-2

-4

-2.5

300

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Output Capacitance

C_ob

2007. 5. 21

Revision No : 2

1/2

中文翻译

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