Datasheet > KTB817B

KTB817B

更新时间： 2024-11-21 17:15:19

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	688K
描述
TO-3P(N)-E

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中文翻译

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数据手册

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KTB817B 数据手册

SEMICONDUCTOR

KTB817B

TRIPLE DIFFUSED PNP TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

· Complementary to KTD1047B.

· Recommended for 60W Audio Frequency

Amplifier Output Stage.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-160

-140

-6

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Pulse

-12

I_CP

-15

P_C

100

℃

Collector Power Dissipation (Tc=25℃)

Junction Temperature

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

h_FE(1) (Note) V_CE=-5V, I_C=-1A

TEST CONDITION

MIN.

TYP.

MAX.

-0.1

UNIT

V_CB=-80V, I_E=0

V_EB=-4V, I_C=0

Emitter Cut-off Current

-0.1

200

DC Current Gain

h_FE

V_CE=-5V, I_C=-6A

I_C=-5A, I_B=-0.5A

V_CE(sat)

V_BE

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Output Capacitance

Turn On Time

-2.5

V_CE=-5V, I_C=-1A

V_CB=-10V, I_E=0, f=1MHz

-1.5

300

0.25

0.53

1.61

MHz

C_ob

t_on

V_CC=-20V

t_f

Fall Time

I_C=1A=10· I_B1=-10· I_B2

R_L=20Ω

μS

t_stg

Storage Time

Note : h_FE(1) Classification O:60∼ 120, Y:100∼ 200

2011. 3. 18

Revision No : 0

1/3

12 3

中文翻译

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