Datasheet > KTB2530

KTB2530

更新时间： 2024-11-20 12:46:31

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	652K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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KTB2530 数据手册

SEMICONDUCTOR

KTB2530

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER

DARLINGTON APPLICATION.

FEATURES

MILLIMETERS

DIM

· Complementary to KTD1530

· Recommended for 80W Audio Amplifier Output Stage.

15.60 0.20

4.80 0.20

19.90 0.20

2.00 0.20

1.00 0.20

3.00 0.20

3.80 0.20

3.50 + 0.20

13.90 0.20

MAXIMUM RATING (Ta=25℃)

12.76 0.20

23.40 + 0.20

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-160

-150

-5

UNIT

1.5+0.15-0.05

16.50 + 0.30

1.40 0.20

13.60 + 0.20

Collector-Emitter Voltage

Emitter-Base Voltage

9.60 0.20

5.45 0.30

3.20 0.10

18.70 0.20

0.60+0.15-0.05

Collector Current

-10

I_B

Base Current

-1

P_C

100

℃

Collector Power Dissipation (Tc=25℃)

Junction Temperature

T_j

150

TO-3P(N)-E

T_stg

Storage Temperature Range

-55∼ 150

EQUIVALENT CIRCUIT

EMITTER

70Ω

BASE

COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

V_(BR)CEO

h_FE

TEST CONDITION

V_CB=-160V, I_E=0

MIN.

TYP.

MAX.

-100

UNIT

μA

V_EB=-5V, I_C=0

Emitter Cut-off Current

I_C=-30mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

-150

V_CE=-4V, I_C=-7A

I_C=-7A, I_B=-7mA

V_CE=-12V, I_C=-2A

V_CB=-10V, I_E=0, f=1MHz

15,000

30,000

-2.5

-3.0

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

230

MHz

C_ob

Collector Output Capacitance

2012. 8. 21

Revision No : 0

1/3

12 3

中文翻译

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