Datasheet > KTB688B

KTB688B

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	443K
描述
TO-3P(N)-E

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中文翻译

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数据手册

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KTB688B 数据手册

SEMICONDUCTOR

KTB688B

TRIPLE DIFFUSED PNP TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

Recommended for 45 50W Audio Frequency Amplifier Output Stage.

Complementary to KTD718B.

MILLIMETERS

DIM

15.60 0.20

4.80 0.20

19.90 0.20

2.00 0.20

1.00 0.20

3.00 0.20

3.80 0.20

3.50 + 0.20

13.90 0.20

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

12.76 0.20

23.40 + 0.20

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-120

-5

UNIT

1.5+0.15-0.05

16.50 + 0.30

1.40 0.20

13.60 + 0.20

9.60 0.20

5.45 0.30

3.20 0.10

18.70 0.20

0.60+0.15-0.05

-10

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

I_B

Base Current

-1

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

T_j

150

TO-3P(N)-E

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=-120V, I_E=0

MIN.

TYP.

MAX.

-10

UNIT

I_EBO

V_EB=-5V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

h_FE(Note)

V_CE(sat)

V_BE

I_C=-50mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

-120

V_CE=-5V, I_C=-1A

I_C=-5A, I_B=-0.5A

V_CE=-5V, I_C=-5A

V_CE=-5V, I_C=-1A

V_CB=-10V, I_E=0, f=1MHz

160

-2.5

-1.5

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

280

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification R:55 110, O:80 160

2005. 3. 14

Revision No : 1

1/2

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