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KTB2510_08 PDF预览

KTB2510_08

更新时间: 2024-02-26 14:13:21
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 345K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTB2510_08 数据手册

 浏览型号KTB2510_08的Datasheet PDF文件第2页浏览型号KTB2510_08的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTB2510  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH POWER AMPLIFIER  
A
Q
B
DARLINGTON APPLICATION.  
K
FEATURES  
· Complementary to KTD1510  
· Recommended for 60W Audio Amplifier Output Stage.  
DIM MILLIMETERS  
A
B
15.9 MAX  
4.8 MAX  
_
C20.0  
D
d
+
0.3  
_
2.0+0.3  
1.0+0.3/-0.25  
2.0  
D
E
F
1.0  
MAXIMUM RATING (Ta=25)  
G
H
I
3.3 MAX  
9.0  
d
CHARACTERISTIC  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-160  
-150  
-5  
UNIT  
V
4.5  
P
J
P
T
2.0  
M
K
L
1.8 MAX  
_
+
20.5 0.5  
M
P
2.8  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
_
5.45+0.2  
1
2
3
_
Φ3.2 0.2  
Q
T
+
V
0.6+0.3/-0.1  
1. BASE  
Collector Current  
-10  
A
2. COLLECTOR (HEAT SINK)  
3. EMITTER  
IB  
Base Current  
-1  
A
PC  
100  
W
Collector Power Dissipation (Tc=25)  
Junction Temperature  
Tj  
150  
TO-3P(N)  
Tstg  
Storage Temperature Range  
-55150  
EQUIVALENT CIRCUIT  
EMITTER  
70  
BASE  
COLLECTOR  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
IEBO  
V(BR)CEO  
hFE  
TEST CONDITION  
VCB=-160V, IE=0  
MIN.  
TYP.  
MAX.  
-100  
-100  
-
UNIT  
-
-
μA  
μA  
V
VEB=-5V, IC=0  
Emitter Cut-off Current  
-
-
IC=-30mA, IB=0  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
-150  
-
12000  
-
VCE=-4V, IC=-7A  
IC=-7A, IB=-7mA  
IC=-7A, IB=-7mA  
VCE=-12V, IC=-2A  
VCB=-10V, IE=0, f=1MHz  
5000  
20000  
-2.5  
-3.0  
-
VCE(sat)  
VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-
-
-
-
V
V
-
50  
MHz  
pF  
Cob  
Collector Output Capacitance  
230  
-
2008. 4. 18  
Revision No : 2  
1/3  

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