5秒后页面跳转
KTC1027 PDF预览

KTC1027

更新时间: 2024-01-20 02:18:28
品牌 Logo 应用领域
SECOS 晶体管
页数 文件大小 规格书
1页 57K
描述
NPN Plastic Encapsulated Transistor

KTC1027 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.48
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

KTC1027 数据手册

  
KTC1027  
0.8A , 120V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92L  
FEATURE  
G
H
Low collector to emitter saturation voltage VCE(sat)  
Audio power amplifier  
High Current  
.
1Emitter  
2Collector  
3Base  
J
A
D
Millimeter  
REF.  
Min.  
4.70  
7.80  
13.80  
3.70  
0.35  
0.35  
Max.  
5.10  
8.20  
14.20  
4.10  
0.55  
0.45  
A
B
C
D
E
F
CLASSIFICATION OF hFE  
B
Product-Rank  
KTC1027-O  
KTC1027-Y  
120~240  
K
E
Range  
80~160  
G
H
J
1.27 TYP.  
1.28  
2.44  
0.60  
1.58  
2.64  
0.80  
C
F
K
Collector  
2
3
Base  
1
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
120  
120  
5
V
V
V
Continuous Collector Current  
Collector Power Dissipation  
Thermal Resistance  
0.8  
0.75  
167  
A
PC  
W
RθJA  
TJ, TSTG  
°C / W  
°C  
Junction, Storage Temperature  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=1mA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut - Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
-
-
-
V
V
V
120  
-
IC=10mA, IB=0  
IE=1mA, IC=0  
5
-
-
-
-
0.1  
0.1  
240  
1
µA VCB=120V, IE=0  
µA VEB=5V, IC=0  
VCE=5V, IC=100mA  
Emitter cut-off current  
IEBO  
-
-
DC Current Gain  
hFE  
80  
-
-
Collector to Emitter Saturation Voltage  
Base – Emitter Voltage  
VCE(sat)  
VBE  
-
V
V
IC=0.5A, IB=50mA  
-
-
-
1
VCE=5V, IC=500mA  
VCB=10V, IE=0, f=1MHz  
Collector Output Capacitance  
Transition Frequency  
Cob  
-
30  
-
pF  
fT  
-
120  
MHz VCE=5V, IC=100mA  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Dec-2012 Rev. A  
Page 1 of 1  

与KTC1027相关器件

型号 品牌 获取价格 描述 数据表
KTC1027_15 SECOS

获取价格

NPN Plastic Encapsulated Elektronische Bauelemente Transistor
KTC1027O WEITRON

获取价格

Small Signal Bipolar Transistor
KTC1027-O SECOS

获取价格

NPN Plastic Encapsulated Transistor
KTC1027Y CJ

获取价格

Transistor
KTC1027-Y SECOS

获取价格

NPN Plastic Encapsulated Transistor
KTC103 KEXIN

获取价格

NPN Digital Transistors
KTC104 KEXIN

获取价格

NPN Digital Transistors
KTC105 KEXIN

获取价格

NPN Digital Transistors
KTC106 KEXIN

获取价格

NPN Digital Transistors
KTC1170 KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT)