Datasheet > KTC1815

KTC1815

更新时间： 2024-09-29 17:15:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	524K
描述
TO-92(AT)

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数据手册

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KTC1815 数据手册

SEMICONDUCTOR

KTC1815

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Excellent h_FELinearity

: h_FE(2)=100(Typ.) at V_CE=6V, I_C=150mA

: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).

Low Noise : NF=1dB(Typ.). at f=1kHz.

Complementary to KTA1015.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

1. EMITTER

2. COLLECTOR

3. BASE

SYMBOL RATING

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

TO-92

150

I_B

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

T_j

150

DIM MILLIMETERS

4.7 MAX

4.8 MAX

3.7 MAX

0.45 TYP

1.27 TYP

3.0 TYP

T_stg

-55 150

0.45 TYP

14 0.5

13.8 + 0.5

2.3 TYP

0.45 MAX

1.0 TYP

2.5 TYP

1. EMITTER

2. COLLECTOR

3. BASE

TO-92 AT TAPING TYPE

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

700

UNIT

V_CB=60V, I_E=0

V_EB=5V, I_C=0

I_EBO

_FE(1) (Note) V_CE=6V, I_C=2mA

DC Current Gain

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=6V, I_C=150mA

I_C=100mA, I_B=10mA

V_CE=10V, I_C=1mA

100

0.1

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.25

1.0

MHz

C_ob

V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

Base Intrinsic Resistance

Noise Figure

2.0

1.0

3.5

_CB=10V, I_E=1mA, f=30MHz

_CE=6V, I_C=0.1mA, Rg=10k , f=1kHz

rbb’

Note : h_FE(1) Classification Y:120 240, GR:200 400

2021. 02. 05

Revision No : 1

1/3

12 3

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