Datasheet > KTC2018_15

KTC2018_15

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1093K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC2018_15 数据手册

SMD Type

Transistors

NPN Transistors

KTC2018

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● Low Collector Emitter Saturation Voltage.

● High Breakdown Voltage

● Complementary to KTA1038

1.27

0.10

1.52

0.80

0.10

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54± 0.20 ]

1. Base

2. Collector

3. Emitter

10.00

± 0.20

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

100

Unit

VCBO

VCEO

VEBO

0.5

℃

Collector Power Dissipation

Junction Temperature

Tc= 25℃

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 10 mA， I

Ic= 50 mA，I

= 0

= 10 mA， IC

CBO

EBO

CB= 100 V , I

^EB= 5V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=4 A, I

=400mA

=4 A, I

1.2

1.5

240

^CE= 5V, I

CE= 5V, I

C= 1 A

C= 4 A

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

^CE= 5V, I = 1 A

MHz

■ Classification of hfe（1）

Type

KTC2018-O

KTC2018-Y

120-240

Range

70-140

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KTC2022I	FOSHAN	获取价格	TO-251
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