Datasheet > KTC1804D

KTC1804D

更新时间： 2024-11-19 22:32:03

品牌	Logo	应用领域
KEC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	410K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

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数据手册

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KTC1804D 数据手册

SEMICONDUCTOR

KTC1804D/L

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH CURRENT SWITCHING APPLICATION.

APPLICATION

Relay drivers, high-speed inverters, converters, and other

general high-current switching applications.

DIM MILLIMETERS

6.60+0.2

6.10+0.2

5.0+0.2

FEATURES

1.10+0.2

Low Collector Emitter Saturation Voltage.

: V_CE(sat)=0.4V(Max.) (I_C=4A)

High Current and High f_T

: I_C=8A, f_T=180MHz.

2.70+0.2

2.30+0.1

1.00 MAX

2.30+0.2

0.5+0.1

2.00+0.20

0.50+0.10

0.91+ 0.10

Excellent Linearity of h_FE

High Speed Switching Time.

: f_T=20nS (Typ.)

0.90+0.1

1.00+0.10

0.95 MAX

Complementary to KTA1204D/L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

DPAK

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltag

Collector Current

Pulse

I_CP

DIM MILLIMETERS

6.60

6.10

0.2

1.0

Ta=25

Collector Power

P_C

5.0 0.2

Dissipation

Tc=25

1.10

9.50

2.30

0.76

0.2

0.6

0.1

T_j

Junction Temperature

150

-55 150

T_stg

1.0 MAX

Storage Temperature Range

2.30+0.2

0.5

2.0

0.1

0.2

0.50 0.1

1.0 0.1

0.90 MAX

1. BASE

2. COLLECTOR

3. EMITTER

IPAK

2003. 3. 27

Revision No : 2

1/4

12 3 4

中文翻译

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