Datasheet > KTC2027

KTC2027

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	40K
描述
TO-220IS

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中文翻译

获取价格

数据手册

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KTC2027 数据手册

SEMICONDUCTOR

KTC2027

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

DIM MILLIMETERS

10.0+0.3

15.0+0.3

FEATURES

2.70 0.3

0.76+0.09/-0.05

Good Linearity of h_FE.

· Suffix U : Qualified to AEC-Q101.

ex) KTC2027-Y-U/PU

Φ3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

2.54+0.1

6.8 0.1

4.5 0.2

2.6+0.2

0.5 Typ

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

1. BASE

2. COLLECTOR

3. EMITTER

TO-220IS

I_B

Base Current

0.4

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

T_j

150

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=80V, I_E=0

MIN.

TYP.

MAX.

UNIT

100

I_EBO

V_EB=5V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

V_(BR)EBO

h_FE(1) (Note)

h_FE(2)

V_CE(sat)

V_BE

I_C=50mA, I_B=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

I_C=10mA, I_B=0

V_CE=5V, I_C=0.5A

V_CE=5V, I_C=3A

I_C=3A, I_B=0.3A

V_CE=5V, I_C=3A

V_CE=5V, I_C=0.5A

V_CB=10V, I_E=0, f=1MHz

240

DC Current Gain

0.45

1.0

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

1.5

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification O:70 140, Y:120 240

2018. 04. 10

Revision No : 2

1/2

中文翻译

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